HiPerFET TM
Power MOSFETs
Q Class
IXFH 13N80Q
IXFT 13N80Q
V DSS
I D25
R DS(on)
=
=
=
800 V
13 A
0.70 W
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q g
Preliminary data sheet
t rr £ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-268 (D3) (IXFT) Case Style
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
800
800
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
G
S
(TAB)
I D25
T C = 25 ° C
13
A
I DM
I AR
E AR
E AS
dv/dt
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S £ I DM , di/dt £ 100 A/ m s, V DD £ V DSS ,
52
13
28
750
5
A
A
mJ
mJ
V/ns
TO-247 AD (IXFH)
(TAB)
T J £ 150 ° C, R G = 2 W
P D
T C = 25 ° C
250
W
T J
T JM
T stg
T L
1.6 mm (0.062 in.) from case for 10 s
-55 ... +150
150
-55 ... +150
300
° C
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
Weight
Mounting torque
TO-247
1.13/10 Nm/lb.in.
6 g
Features
TO-268
4
g
?
IXYS advanced low Q g process
?
?
International standard packages
Low R DS (on)
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
V DSS V GS = 0 V, I D = 250 m A
Characteristic Values
Min. Typ. Max.
800 V
? Unclamped Inductive Switching (UIS)
rated
? Fast switching
? Molding epoxies meet UL 94 V-0
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 I D25
Pulse test, t £ 300 m s, duty cycle d £ 2 %
2.5
4.5
± 100
50
1
0.70
V
nA
m A
mA
W
flammability classification
Advantages
? Easy to mount
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98626 (6/99)
1-2
相关PDF资料
IXFT140N10P MOSFET N-CH 100V 140A TO-268
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